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Tungsten trioxide nano hollow sphere semiconductor material and preparation method thereof, gas sensor and preparation method and application thereof

A technology of gas sensor and tungsten trioxide, which is applied in the direction of tungsten oxide/tungsten hydroxide, nanotechnology, analytical materials, etc., can solve the problems of high cost, unstable shape of hollow spherical structure materials, environmental pollution, etc. The effect of uniform diameter

Inactive Publication Date: 2019-04-09
SHANGHAI OCEAN UNIV
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  • Abstract
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  • Claims
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Problems solved by technology

In the prior art, the preparation of WO 3 Methods for hollow spherical structural materials include template method, sol-gel method, etc., but these methods need to introduce a large amount of strong acid and organic solvent, which is costly and easy to cause environmental pollution, and the preparation of WO 3 Morphological instability of hollow spherical structure materials

Method used

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  • Tungsten trioxide nano hollow sphere semiconductor material and preparation method thereof, gas sensor and preparation method and application thereof
  • Tungsten trioxide nano hollow sphere semiconductor material and preparation method thereof, gas sensor and preparation method and application thereof
  • Tungsten trioxide nano hollow sphere semiconductor material and preparation method thereof, gas sensor and preparation method and application thereof

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preparation example Construction

[0031] The invention provides a kind of preparation method of tungsten trioxide nano hollow sphere semiconductor material, comprising the following steps:

[0032] Mix soluble hexavalent tungsten salt, alcoholic water solvent and alkaline precipitant, and conduct hydrothermal reaction of the obtained mixed solution to obtain tungsten trioxide nano hollow sphere semiconductor material;

[0033] The concentration of the hexavalent tungsten salt in the mixed solution is 5-30 mmol / L, and the concentration of the alkaline precipitant is 0.1-0.5 mol / L;

[0034] The temperature of the hydrothermal reaction is 100-200° C., and the time of the hydrothermal reaction is 5-40 hours.

[0035] In the present invention, the water-soluble hexavalent tungsten salt is preferably WCl 6 、Na 2 WO 4 2H 2 O or Na 2 WO 4 .

[0036] In the present invention, the alcohol-water solvent is preferably a mixture of a small molecule alcohol solvent and water, and the volume ratio of the small molecul...

Embodiment 1

[0067] 0.72mmol of WCl 6 Add 60mL ethanol-water (V 乙醇 / V 水 : 30%) solution. After stirring for 5 min on a magnetic stirrer, a slightly white translucent solution was obtained; then it was transferred to a 100 mL polytetrafluoroethylene-lined stainless steel reaction kettle, and 0.1 g of urea was added at the same time to obtain a mixed solution. WCl in the resulting mixture 6 The concentration is 12mmol / L.

[0068] Put the reaction kettle in an electric oven at 120°C for hydrothermal reaction for 24h, and cool naturally to room temperature; the white product was collected by centrifugation, washed with deionized ethanol and deionized water respectively, and then dried overnight at 80°C to obtain WO 3 Nano hollow sphere semiconductor material.

Embodiment 2

[0070] WCl in the resulting mixture 6 The concentration is 16mmol / L, and other conditions are the same as in Example 1.

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Abstract

The invention provides a preparation method of a tungsten trioxide nano hollow sphere semiconductor material and belongs to the technical field of semiconductor materials. The preparation method comprises the following steps: mixing soluble hexavalent tungsten salt, an alcohol aqueous solvent and an alkaline precipitator; and carrying out a hydrothermal reaction on the obtained mixed solution to obtain the tungsten trioxide nano hollow sphere semiconductor material. Concentration of the hexavalent tungsten salt is 5-30 mmol / L, concentration of the precipitator is 0.1-0.5 mol / L, the temperatureof hydrothermal reaction is 100-200 DEG C, and the time of hydrothermal reaction is 5-40 hours. By controlling proportion, reaction temperature and reaction time of reaction raw materials, the tungsten trioxide nano hollow sphere semiconductor material which is uniform in particle size, intact in grain size and uniform in wall thickness is obtained. The invention also provides a gas sensor prepared by the tungsten trioxide nano hollow sphere semiconductor material. The gas sensor is applied to detecting organophosphorus pesticides and is high in sensitivity.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a tungsten trioxide nano hollow sphere semiconductor material and a preparation method thereof, a gas sensor, a preparation method and application thereof. Background technique [0002] Food safety is related to public health issues such as human health, and is mainly caused by excessive residues of toxic and harmful substances in food. In recent years, due to the pollution of the planting environment, the intensification of pests and diseases, the increase in market demand, and the lack of professional knowledge of pesticides among pesticide users, the abuse or irrational use of pesticides has become serious, making the problem of pesticide residues one of the main sources of food safety problems. Organophosphorus pesticides are the most widely used pesticides in the production process of agricultural products in my country. However, most organophosphorus pestic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G41/02G01N27/12G01N27/26B82Y40/00
CPCB82Y40/00C01G41/02C01P2002/72C01P2004/03C01P2004/04C01P2004/34C01P2004/62G01N27/127G01N27/26
Inventor 朱永恒蔡海洁付元帅刘海泉赵勇鄂畅
Owner SHANGHAI OCEAN UNIV
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