Millimeter-wave and terahertz-wave direct modulator and fabrication method thereof
A modulator, a direct technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of large loss and limit the performance improvement of modulators, reduce reflection loss and transmission loss, and increase absolute modulation depth , Reduce the effect of differential loss
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[0025] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0026] Since the growth of GaN materials generally uses sapphire, silicon carbide or silicon substrates, the dielectric constant of these substrate materials is about 10, and the loss for millimeter waves and terahertz waves is relatively large. If the growth substrate of the material is replaced by a substrate with a low dielectric constant such as quartz, the reflection loss and transmission loss can be reduced, and the performance of the modulator can be greatly improved. However, there is currently no millimeter-wave and terahertz direct modulation device based on substrate replacement technology in the world. This invention proposes a method for preparing a millimeter-wave and terahertz direct modulator that can realize substrate replacement technology, which can solve the current There is a problem of large loss in the modulator...
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