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Polyaniline/iron oxide nano composite resistance-type material sensor, and preparation method thereof

An iron oxide nanometer and composite resistor technology, applied in the field of sensors, can solve the problems of difficult development and application of flexible optoelectronic devices, the sensitivity of gas sensors is not particularly high, and the combination of nanomaterials and substrates is not good enough, so as to promote bonding and promote charge transfer. , the effect of convenient steps

Active Publication Date: 2015-12-09
ZHEJIANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, a transfer step is required between semiconductor iron oxide nanomaterials and device preparation, which not only increases the device preparation process, but also affects the consistency of the device if the uniform dispersion and deposition of nanomaterials are not well controlled during the preparation process. and increase production costs
In addition, on the one hand, conventional methods of preparing semiconducting iron oxide nanomaterials usually require high-temperature treatment, while flexible organic and polymer material substrates are often unable to withstand high temperatures, which limits the use of flexible polymer substrates and hinders the development of flexible optoelectronic devices. and apply difficulties
On the other hand, there is often a problem that the bonding between the nanomaterial and the substrate is not good enough on the device prepared by re-dispersion and deposition, which makes it have a large contact resistance and affects the charge transfer process, which will affect the photoelectric function of the device. performance is adversely affected
[0004] However, the sensitivity of gas sensors prepared by using these semiconductor oxides is generally not particularly high. For example, tin dioxide and polypyrrole mentioned in our previous patent application (Method and application of low-temperature in-situ growth of nanostructured semiconductor metal oxides, CN104807859A) The sensitivity of the composite gas sensor is less than 80%, and it is difficult to selectively detect organic vapors

Method used

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  • Polyaniline/iron oxide nano composite resistance-type material sensor, and preparation method thereof
  • Polyaniline/iron oxide nano composite resistance-type material sensor, and preparation method thereof
  • Polyaniline/iron oxide nano composite resistance-type material sensor, and preparation method thereof

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Embodiment 1

[0032] The preparation method of the method of the present invention comprises the following steps:

[0033] 1. prepare the mixed solution of ferric chloride and polyvinyl butyral, i.e. spinning solution, the concentration of said ferric chloride is 50mg / mL, and the concentration of polyvinyl butyral is 30mg / mL; Ferric oxide can be any metal salt that can be dissolved in the spinning solution solvent and has good compatibility with spinning aids, including but not limited to ferric chloride and ferric nitrate; polyvinyl butyral can be any One or more spinnable polymers, including but not limited to polyvinyl butyral, polyvinylidene fluoride, polyvinyl chloride, polyvinyl alcohol;

[0034]② Deposit the electrospinning solution in step ① in the form of nanofibers on the ceramic substrate under the electrospinning conditions of flow rate of 0.3mL / h; receiving distance of 15cm; spinning voltage of 8kV; receiving time of 3min; The ceramic substrate can be a flexible material or a ...

Embodiment 2

[0039] 1. prepare the mixed solution of ferric nitrate and polyvinyl butyral, i.e. spinning solution, the concentration of described ferric nitrate is 10mg / mL, and the concentration of polyvinyl butyral is 100mg / mL;

[0040] ②The electrospinning solution in step ① is deposited on the polyethylene terephthalic acid in the form of nanofibers under the electrospinning conditions of the flow rate of 0.1mL / h; the receiving distance of 5cm; the spinning voltage of 5kV; and the receiving time of 30min. on glycol ester substrates;

[0041] ③ drying the substrate deposited with nanofibers obtained in step ② and then hydrothermally treating it at 180° C. for 24 hours to obtain a substrate with a semiconductor iron oxide nanostructure grown in situ, and the preparation method;

[0042] ④ Dip-coating a layer of polyaniline on the substrate prepared in step ③ with the semiconductor iron oxide nanostructure to prepare a gas sensor.

[0043] The resulting method has a low resistance of less...

Embodiment 3

[0045] 1. prepare the mixed solution of ferric nitrate and polyvinyl chloride, i.e. spinning solution, the concentration of described ferric nitrate is 300mg / mL, and the concentration of polyvinyl chloride is 40mg / mL;

[0046] ② Deposit the electrospinning solution in step ① in the form of nanofibers on the polytetrafluoroethylene substrate under the electrospinning conditions of flow rate 1mL / h; receiving distance 30cm; spinning voltage 30kV; receiving time 30min superior;

[0047] ③ drying the substrate deposited with nanofibers obtained in step ② and then hydrothermally treating it at 120° C. for 6 hours to obtain a substrate with semiconductor iron oxide nanostructures grown in situ, and the preparation method;

[0048] ④ Dip-coating a layer of polyaniline on the substrate prepared in step ③ with the semiconductor iron oxide nanostructure to prepare a gas sensor.

[0049] The resulting method has a low impedance of less than 200 kΩ at low concentrations (≤10 ppm), a good ...

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Abstract

The invention discloses a polyaniline / iron oxide nano composite resistance-type material sensor, and a preparation method thereof. The polyaniline / iron oxide nano composite resistance-type material sensor comprises a ceramic substrate, an interdigital gold electrode, and a gas sensitive material which are arranged successively; the gas sensitive material is composed of a polyaniline / iron oxide nano composite, wherein p-n junction effects formed on the interface of p-type polyaniline and n-type iron oxide are capable of increasing response sensitivity of the polyaniline / iron oxide nano composite resistance-type material sensor on gas at room temperature greatly, accelerating response, and improving stability, and a polyaniline layer is capable of reducing element resistance value greatly, and is convenient for testing on sensor resistance response characteristics. The polyaniline / iron oxide nano composite resistance-type material sensor possesses high response sensitivity on ammonia gas at room temperature; resilience is excellent; response is rapid; stability is high; and the polyaniline / iron oxide nano composite resistance-type material sensor can be widely applied to accurate measuring and controlling of ammonia gas concentration in industrial and agricultural production processes and the atmosphere environment. The invention also provides a preparation method of the polyaniline / iron oxide nano composite resistance-type material sensor; and the preparation method is simple, is low in cost, and is especially suitable for batch production.

Description

technical field [0001] The invention relates to the field of sensors, in particular to an ultrahigh-sensitivity polyaniline / iron oxide resistance material gas sensor and a preparation method thereof. Background technique [0002] Semiconductor metal oxides have great scientific research value and practical technical application value. More commonly used are SnO 2 , ZnO, TiO 2 , Fe 2 o 3 wait. Most of these metal oxides are n-type multifunctional semiconductors with wide energy bands, which have excellent electrical properties, photocatalytic properties, electrochemical properties, photoelectric properties, gas sensing, humidity sensing, optical properties, etc. (L.b.Luo , F.x. Liang and J.s. Jie, Nanotechnology, 2011, 22, 485701; M. Batzill, K. Katsiev, J. M. Burst, U. Diebold, A. M. Chaka and B. Delley, Physical Review B, 2005, 72, 165414; H. Zhang, Q. He, X. Zhu, D. Pan, X. Deng and Z. Jiao, Cryst Eng Comm, 2012, 14, 3169-3176.). Due to these excellent properties, r...

Claims

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Application Information

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IPC IPC(8): G01N27/12B82Y30/00B82Y15/00
Inventor 李扬班会涛杨慕杰
Owner ZHEJIANG UNIV
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