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Method for passivating gallium antimonide wafer

A single-chip gallium antimonide technology, which is applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of unsatisfactory electrical properties of semiconductor devices, and achieve improved surface electrical properties, uniform distribution, and stable chemical properties. Effect

Inactive Publication Date: 2015-11-18
CHINA ELECTRONICS TECH GRP NO 46 RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Moreover, the oxidation produces a simple antimony element layer, and its existence forms a conductive channel parallel to the active area, making the electrical properties of the semiconductor device thus obtained unsatisfactory.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] 1. Passivation solution preparation

[0017] In a circular water tank with a diameter of 20 cm, inject an appropriate amount of ammonium sulfide solution with a concentration of 21%, and control the liquid level to be 5 mm above the surface of the gallium antimonide single chip. The temperature of the ammonium sulfide solution was controlled at 20 °C.

[0018] 2. Passivation process

[0019] After chemical mechanical polishing, remove the ceramic plate carrying the gallium antimonide single wafer, and quickly spray the ceramic plate with deionized water, and the spraying time should be controlled within 10s. After spraying, do not do drying treatment, directly immerse the ceramic plate in the pre-prepared ammonium sulfide solution, the passivation time is 120s, take out the ceramic plate after the passivation process, rinse with a large amount of deionized water until the residual sulfide Ammonium solution is all washed. After drying with compressed air, it is ready ...

Embodiment 2

[0022] 1. Passivation solution preparation

[0023] In a circular water tank with a diameter of 20 cm, inject an appropriate amount of ammonium sulfide solution with a concentration of 21%, and control the liquid level to be 5 mm above the surface of the gallium antimonide single chip. The temperature of the solution was controlled at 20°C.

[0024] 2. Passivation process

[0025] After chemical mechanical polishing, remove the ceramic plate carrying the gallium antimonide single wafer, and quickly spray the ceramic plate with deionized water, and the spraying time should be controlled within 15s. After spraying, no drying treatment is required, and the ceramic disc is directly immersed in the pre-prepared ammonium sulfide solution. The passivation time is 90s. After the passivation process, the ceramic disc is taken out and rinsed with a large amount of deionized water until the residual ammonium sulfide The solution was all washed off. After drying with compressed air, it...

Embodiment 3

[0028] 1. Passivation solution preparation

[0029] In a circular water tank with a diameter of 20 cm, inject an appropriate amount of ammonium sulfide solution with a concentration of 21%, and control the liquid level to be 5 mm above the surface of the gallium antimonide single chip. The temperature of the solution was controlled at 20°C.

[0030] 2. Passivation process

[0031] After chemical mechanical polishing, remove the ceramic plate carrying the gallium antimonide single wafer, and quickly spray the ceramic plate with deionized water, and the spraying time should be controlled within 15s. After the spraying, do not dry the ceramic disc directly into the pre-prepared ammonium sulfide solution. The passivation time is 30s. After the passivation process, the ceramic disc is taken out and rinsed with a large amount of deionized water until the residual ammonium sulfide The solution was all washed off. After drying with compressed air, it is ready for the next cleaning ...

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Abstract

The invention discloses a method for passivating a gallium antimonide wafer. The method comprises the steps of after polishing, taking a ceramic plate out, spraying deionized water to the ceramic plate for 10-30 seconds; after spraying, directly immersing the ceramic plate into an ammonium sulfide solution with a temperature of 5-30 DEG C in a manner that the liquid surface of the ammonium sulfide solution is higher than the surface of the gallium antimonide wafer by 5-10mm, and performing passivation for 20-120s; and after passivation, taking the ceramic plate out, flushing with the deionized water, and after blowing the ceramic plate to dry through compressed air, preparing to perform a next cleaning process. The ammonium sulfide solution is used for performing passivation processing on the surface of the gallium antimonide wafer after polishing, and a sulfide passivation layer with a thickness of several nanometers can be formed on the surface of the wafer in a relatively high speed. The sulfide layer has advantages of uniform distribution, stable chemical property in air, no spontaneous action with oxygen, and fixed chemical component in a relatively long time period. Furthermore the surface electrical property of a finished gallium antimonide wafer is greatly improved.

Description

technical field [0001] The invention relates to a processing technology of semiconductor materials, in particular to a passivation method of gallium antimonide single wafer. Background technique [0002] GaSb (gallium antimonide) is a versatile III-V semiconductor material. The heterojunction between GaSb and other semiconductor materials is used in near-infrared lasers, light-emitting diodes, air pollution detectors, thermal-optical devices, and wavelength range 2- 5 and 8-14μm photodetectors have shown good application prospects. In addition, the lattice constant of GaSb makes it very suitable as an epitaxial growth surface for ternary or quaternary III-V semiconductors such as AlGaIn (aluminum gallium indium), AsSb (arsenic antimonide), and other superlattice structures. [0003] The chemical properties of GaSb are very active and easy to oxidize, which makes the antimony element tend to form a natural oxide layer during processing, thus creating a high-density surface s...

Claims

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Application Information

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IPC IPC(8): H01L21/306
CPCH01L21/306
Inventor 卢伟涛李晖徐永宽程红娟
Owner CHINA ELECTRONICS TECH GRP NO 46 RES INST
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