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Silicon carbide smelting method

A smelting method and silicon carbide technology, applied in the field of smelting, can solve the problems of unstable furnace output, high energy consumption, mixed crystal forms, etc., and achieve the effects of improving production efficiency, reducing energy consumption, and preventing secondary decomposition at high temperature.

Active Publication Date: 2015-04-01
JIANGSU LEYUAN MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a new silicon carbide smelting method, which can improve furnace production and reduce energy consumption, in view of the problems of mixed crystal forms, unstable furnace production, and high energy consumption in the current domestic Acheson smelting method. Consumption, effective control of crystal form

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  • Silicon carbide smelting method

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Effect test

Embodiment 1

[0016] Embodiment 1, a kind of silicon carbide smelting method, its steps are as follows:

[0017] (1) SiC seed crystal treatment: choose silicon carbide of different crystal forms as the seed crystal according to the different crystal forms of silicon carbide, and perform the following treatment on the silicon carbide that will be used as the seed crystal: first crush and sieve the silicon carbide , select silicon carbide with a particle size of 3 mm for purification, use pickling method for purification, then rinse with pure water until the pH value is 6.5, and dry;

[0018] (2) Addition of silicon carbide seed crystals: the addition position and amount of silicon carbide seed crystals are as follows: with the graphite electrode as the center, 6H silicon carbide seed crystals are placed within 0~10cm, and the added seed crystals account for 10% of the mass percentage of the mixture. 0.1%, place 6H silicon carbide seeds within the range of 10cm~25cm, the added seeds account f...

Embodiment 2

[0019] Embodiment 2 A kind of silicon carbide smelting method, its steps are as follows:

[0020] (1) SiC seed crystal treatment: choose silicon carbide of different crystal forms as the seed crystal according to the different crystal forms of silicon carbide, and perform the following treatment on the silicon carbide that will be used as the seed crystal: first crush and sieve the silicon carbide , select silicon carbide with a particle size of 8 mm for purification, use pickling method for purification, then rinse with pure water until the pH value is 7.5, and dry;

[0021] (2) Addition of silicon carbide seed crystals: the addition position and amount of silicon carbide seed crystals are as follows: with the graphite electrode as the center, 6H silicon carbide seed crystals are placed within 0~10cm, and the added seed crystals account for 10% of the mass percentage of the mixture. 5%, place 6H silicon carbide seeds within the range of 10cm~25cm, the added seeds account for ...

Embodiment 3

[0022] Embodiment 3 A kind of silicon carbide smelting method, its steps are as follows:

[0023] (1) SiC seed crystal treatment: choose silicon carbide of different crystal forms as the seed crystal according to the different crystal forms of silicon carbide, and perform the following treatment on the silicon carbide that will be used as the seed crystal: first crush and sieve the silicon carbide , select silicon carbide with a particle size of 5 meters for purification, use pickling method for purification, then rinse with pure water until the pH value is 7.0, and dry;

[0024] (2) Addition of silicon carbide seed crystals: the addition position and amount of silicon carbide seed crystals are as follows: with the graphite electrode as the center, 6H silicon carbide seed crystals are placed within 0~10cm, and the added seed crystals account for 10% of the mass percentage of the mixture. 1%, place 6H silicon carbide seeds within the range of 10cm~25cm, the added seeds account ...

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Abstract

The invention discloses a silicon carbide smelting method which comprises the following steps: performing the following treatments on the selected silicon carbide serving as a seed crystal: performing crushing treatment and screening treatment, performing purifying treatment on the selected silicon carbide with the particle size of 3-8mm by adopting an acid-cleaning method, and washing by using purified water; taking a graphite electrode as the center, putting 0.1-5 percent of 6H silicon carbide seed crystal in a range from 0cm to 10cm, putting 0.3-8 percent of 6H silicon carbide seed crystal in a range from 10cm to 25cm, and putting 1-10 percent of 4H silicon carbide seed crystal in a range from 25cm to 40cm. The method disclosed by the invention is reasonable in design and high in operability. The seed crystal is added during silicon carbide smelting, so that the silicon carbide growth efficiency is effectively improved, the crystal form of the silicon carbide is effectively controlled, and the energy consumption is reduced.

Description

technical field [0001] The technical invention relates to a smelting method, especially a silicon carbide smelting method. Background technique [0002] Natural silicon carbide rarely exists. Natural silicon carbide has been found in meteorites. At present, silicon carbide is generally produced by high-temperature smelting. Silicon carbide has no melting point and boiling point in the usual sense, only the decomposition temperature. In industry, 2600 degrees is usually used to represent the decomposition temperature of silicon carbide. [0003] Industrial synthetic silicon carbide mainly uses quartz sand and petroleum coke as raw materials, and synthesizes silicon carbide through high-temperature smelting. There are Acheson method and ESK method for industrial smelting of silicon carbide. During the silicon carbide smelting and synthesis process, the resistance furnace is energized, and the temperature of the furnace core body rises to about 2500 degrees. The heat is tran...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/36
Inventor 朱立起胡顺武顾小方李佩健
Owner JIANGSU LEYUAN MATERIAL
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