Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Single grating high gain flatness L-band erbium doped fiber amplifier

An erbium-doped fiber, L-band technology, applied in the field of optical communication, can solve the problems of non-uniform gain enhancement amplitude, poor gain flatness performance, etc., and achieve the effects of compressing unevenness, improving flatness, and simple structure

Inactive Publication Date: 2015-02-25
HEILONGJIANG UNIV
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that the gain enhancement range of the existing erbium-doped fiber amplifier using the fiber loop mirror structure presents non-uniform characteristics, and the gain flatness performance is poor. The present invention provides a single grating high-gain flat L-band erbium-doped fiber amplifier optical fiber amplifier

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Single grating high gain flatness L-band erbium doped fiber amplifier
  • Single grating high gain flatness L-band erbium doped fiber amplifier
  • Single grating high gain flatness L-band erbium doped fiber amplifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] combine Figure 1 to Figure 5 Describe this embodiment, the single grating high-gain flat L-band erbium-doped fiber amplifier described in this embodiment, the erbium-doped fiber amplifier includes a tunable laser 1, a first pumping source 9 and a second pumping source 10, a first An isolator 2 and the second isolator 8, the first erbium fiber 4 and the second erbium fiber 7, the first wavelength division multiplexer 3 and the second wavelength division multiplexer 5, fiber grating 6, fiber optic spectrometer 11 and optical power Count 12;

[0023] Wherein, the first pumping source 9, the first wavelength division multiplexer 3 and the first erbium fiber 4 form the first stage optical amplification, the second pumping source 10, the second wavelength division multiplexer 5, the fiber grating 6 and The second erbium fiber 7 forms the second stage of optical amplification. The selected isolator is a C+L band optical isolator, and the spectral characteristics and gain ch...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Wavelengthaaaaaaaaaa
Heart wavelengthaaaaaaaaaa
Bandwidthaaaaaaaaaa
Login to View More

Abstract

The invention provides a single grating high gain flatness L-band erbium doped fiber amplifier, belongs to the technical field of optical communication and aims to solve the problems that according to an erbium doped fiber amplifier of an existing optical fiber annular mirror structure, the gain enhancing amplitude is uneven, and the gain flatness is poor. A tunable laser emits the L-band light entering a first wavelength division multiplexer via a first insulator and a first pumping source to reach a first doped fiber, the first doped fiber emits C-band amplified spontaneous emission light, the L-band light, the C-band amplified spontaneous emission light and the light emitted by the second pumping source enter a second doped fiber via a second wavelength division multiplexer and an optical fiber grating, and the L-band light amplification is implemented; the amplified L-band light and the residual C-band amplified spontaneous emission light reach a second insulator; the L-band signals pass, the residual C-band amplified spontaneous emission light is reflected to the second doped fiber through the end face of the second insulator, secondary reflection is formed until the residual C-band amplified spontaneous emission light reaches the optical fiber grating, the erbium ions of the second doped fiber are excited once more, and the secondary pumping of the L-band signal light is implemented. The amplifier is applied to optical communication and sensing systems.

Description

technical field [0001] The invention belongs to the technical field of optical communication. Background technique [0002] Erbium-doped fiber amplifier is a key device in optical communication and sensing systems, and its performance determines the quality of optical signal reception. With the continuous growth of communication capacity, the traditional C-band has been difficult to meet the needs of users. Extending the gain spectrum of the erbium-doped fiber amplifier to the L-band to realize ultra-wideband optical signal transmission is of great value for the practical application of optical fiber communication and sensing systems. However, compared with the C-band, the L-band is located at the end of the gain spectrum of the erbium fiber, and the inversion degree of the number of erbium ions is lower, accompanied by higher amplified spontaneous emission noise and loss, resulting in the output gain of the L-band erbium-doped fiber amplifier. The efficiency is reduced an...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01S3/067H01S3/091H01S3/082
Inventor 杨九如柳春郁
Owner HEILONGJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com