Method for manufacturing semiconductor element with metal gate
A metal gate and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as complex back gate technology, achieve good hole filling ability, novel process design, and increase reliability Effect
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[0029] In order to enable those skilled in the art of the present invention to further understand the present invention, several preferred embodiments of the present invention are enumerated below, together with the accompanying drawings, to describe in detail the composition and desired effects of the present invention.
[0030] Please refer to Figure 1 to Figure 12 , is a schematic diagram of a method for fabricating a semiconductor device with a metal gate in the first embodiment of the present invention. First, a substrate 300 is provided, such as a silicon substrate, a silicon-containing substrate, or a silicon-on-insulator (SOI) substrate. The substrate 300 has a plurality of shallow trench isolations (STIs) 302 . The first active region 400 and the second active region 500 which are electrically insulated from each other can be defined by the region surrounded by the shallow trench isolation 302 . Next, the first conductive type transistor 402 and the second conductiv...
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