Manufacturing method of semiconductor element with metal gate

Abstract

The invention provides a method for manufacturing a semiconductor element with a metal gate, which comprises the following step of: firstly providing a substrate, wherein the substrate comprises a first conductive type transistor and a second conductive type transistor, the first conductive type transistor comprises a first sacrifice gate, and the second conductive type transistor comprises a second sacrifice gate; removing the first sacrifice gate to form a first groove and forming a first metal layer and a first substance layer in the first groove; and flattening the first metal layer and the first substance layer; removing a second sacrifice gate to form a second groove and forming a second metal layer and a second substance layer in the second groove; and finally flattening the second metal layer and the second substance layer.

Description

technical field [0001] The invention relates to a manufacturing method of a semiconductor element with a metal gate. Background technique [0002] In the known semiconductor industry, polysilicon is widely used in semiconductor devices such as metal-oxide-semiconductor (MOS) transistors as a standard gate material choice. However, as the size of MOS transistors continues to shrink, traditional polysilicon gates have problems such as boron penetration (boronpenetration) that leads to device performance degradation and unavoidable depletion effects, making the equivalent gate dielectric The layer thickness increases, the gate capacitance value decreases, and then leads to the decline of the driving ability of the device. Therefore, the semiconductor industry is trying to use new gate materials, such as using work function metals to replace the traditional polysilicon gates, as a control electrode that matches the high-k (High-K) gate dielectric layer. . [0003] In compleme...

AI Technical Summary

Problems solved by technology

However, because the gate-last process is quite complicated and requires multiple processes to complete, manufacturers are currently striving to simplify the process of forming metal gates.

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